Thermal Conductivity Paper Database

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Recommended Papers for: Alexander A. Balandin

Total Papers Found: 15

“Graphene-Like” Exfoliation of Atomically-Thin Films of Bi2Te3 and Related Materials: Applications in Thermoelectrics and Topological Insulators

This article examined the properties of bismuth telluride (Bi2Te3) after “graphene-inspired” exfoliation left its crystalline films with a thickness of a few atoms. The thermal conductivities were found using the transient plane source (TPS) technique and the laser-flash method. An ...

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Graphene-Enhanced Phase Change Materials for Thermal Management of Battery Packs

The potential of graphene and few-layer graphene to be used as fillers in a paraffin wax phase change material (PCM) was evaluated. The goal was to prepare a composite PCM with a higher thermal conductivity than the pure paraffin wax. The ability of the composite ...

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Thermal conduction through diamond – silicon heterostructures

The thermal conductivity and thermal boundary resistance between ultrananocrystalline diamond (UNCD) and microcrystalline diamond (MCD) films on silicon wafers were evaluated. It was found that the MCD/Si composite wafers were more thermally conductive than the UNCD/Si wafers over the temperature range tested. It ...

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Exfoliation and Characterization of Bismuth Telluride Atomic Quintuples and Quasi-Two-Dimensional Crystals

High-quality bismuth telluride crystals having a thickness of only a few atoms were prepared by a method similar to that for graphene mechanical exfoliation. The potential for these materials to be used as thermoelectric materials was then investigated. It was found that the properties of ...

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Direct Low-Temperature Integration of Nanocrystalline Diamond with GaN Substrates for Improved Thermal Management of High-Power Electronics

This study aimed to develop a new technique for thermal management in high powered gallium nitride (GaN) electronic and optoelectronic devices. The researchers integrated GaN with diamond through the process of depositing high-quality nanocrystalline diamond films directly onto the GaN material at temperatures between 450-500°...

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