This article examined the properties of bismuth telluride (Bi2Te3) after “graphene-inspired” exfoliation left its crystalline films with a thickness of a few atoms. The thermal conductivities were found using the transient plane source (TPS) technique and the laser-flash method. An instrument was used for obtaining the thermal conductivity with the TPS technique. It was found that the exfoliated thin films have low thermal conductivity, relatively ...
The potential of graphene and few-layer graphene to be used as fillers in a paraffin wax phase change material (PCM) was evaluated. The goal was to prepare a composite PCM with a higher thermal conductivity than the pure paraffin wax. The ability of the composite PCM to reduce temperature variation in lithium ion batteries was also evaluated over 10 charging – discharging cycles. It was found that ...
The thermal conductivity and thermal boundary resistance between ultrananocrystalline diamond (UNCD) and microcrystalline diamond (MCD) films on silicon wafers were evaluated. It was found that the MCD/Si composite wafers were more thermally conductive than the UNCD/Si wafers over the temperature range tested. It was also found that in both types of composite wafer, the thermal conductivity increased with temperature in contrast to the decrease that is observed in ...
High-quality bismuth telluride crystals having a thickness of only a few atoms were prepared by a method similar to that for graphene mechanical exfoliation. The potential for these materials to be used as thermoelectric materials was then investigated. It was found that the properties of these materials could be fine-tuned by altering the thickness, or the sequence of atomic planes. “Stacked superlattices” were formed using these atomic films, and these ...
This study aimed to develop a new technique for thermal management in high powered gallium nitride (GaN) electronic and optoelectronic devices. The researchers integrated GaN with diamond through the process of depositing high-quality nanocrystalline diamond films directly onto the GaN material at temperatures between 450-500°C. Highly controlled growth conditions for the diamond ensured that it was of good quality. Thermal conductivity measurements using the laser flash method were performed ...
