Category: Transient Plane Source
Author(s): Alexander A. Balandin, D. Kotchetkov, M. Rahman, S. Subrina, V. Goyal
Keywords: films, Scanning Electron Microscopy, Scanning Electron Microscopy (SEM), SEM, Silicon - Diamond Composites, Thermal Boundary Resistance, Thermal Conductivity, TPS Method, Transient Plane Source, Transient plane source (TPS) method
Abstract: The thermal conductivity and thermal boundary resistance between ultrananocrystalline diamond (UNCD) and microcrystalline diamond (MCD) films on silicon wafers were evaluated. It was found that the MCD/Si composite wafers were more thermally conductive than the UNCD/Si wafers over the temperature range tested. It was also found that in both types of composite wafer, the thermal conductivity increased with temperature in contrast to the decrease that is observed in pure silicon. The thickness of the MCD film was determined to affect the measured thermal conductivity of the composites, as a thicker film resulted in a higher thermal conductivity. It was determined based on the experimental results that these composite wafers have potential to be used in state-of-the-art electronic devices.
Reference: 12th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm), Las Vegas, NV, June 2-5, 2010.
DOI: 10.1109/ITHERM.2010.5501369