This article examined the properties of bismuth telluride (Bi2Te3) after “graphene-inspired” exfoliation left its crystalline films with a thickness of a few atoms. The thermal conductivities were found using the transient plane source (TPS) technique and the laser-flash method. An ...
High-quality bismuth telluride crystals having a thickness of only a few atoms were prepared by a method similar to that for graphene mechanical exfoliation. The potential for these materials to be used as thermoelectric materials was then investigated. It was found that the properties of ...
This study aimed to develop a new technique for thermal management in high powered gallium nitride (GaN) electronic and optoelectronic devices. The researchers integrated GaN with diamond through the process of depositing high-quality nanocrystalline diamond films directly onto the GaN material at temperatures between 450-500°...
