Category: Transient Plane Source
Author(s): A. Popovich, Alexander A. Balandin, I. Calizo, M. Shamsa, S. Ghosh, V. Ralchenko
Keywords: 0% nitrogen, 25% nitrogen, films, heat capacity, mass density, mcd, metal-oxide-semiconductors, micro-raman spectroscopy, microcrystalline diamond, microcrystalline diamond (mcd), nitrogentated ultrananocrystalline diamond, nitrogentated ultrananocrystalline diamond (uncd) at 25% n, pcd, photon-photon interactions, polycrystalline diamond, polycrystalline diamond (pcd), resistance, scanning electron microscopy, scanning electron microscopy (sem), sem, temperature, thermal conductivity, thermal conductivity measurement, thermal diffusivity, tps, transient plane source, transient plane source (tps) method, ucd, ultrananocrystalline diamond, ultrananocrystalline diamond (ucd), uncd, velocity, x-ray diffraction, x-ray diffraction (xrd), xrd
Abstract: Thermal conductivity testing was done on nitrogenated ultrananocrystalline diamond films on silicon. Temperature dependence on thermal conductivity was measured using these two techniques. A decrease in thermal conductivity was observed with the introduction of nitrogen addition. It was observed that MCD had the highest thermal conductivity followed by UNCD at 25% nitrogen and UNCD at 0% nitrogen.
Reference: Journal of Applied Physics 103, (2008)
DOI: 10.1063/1.2907865