Category: Transient Plane Source
Author(s): Alexander A. Balandin, D. Teweldebrhan, F. Parvizi, H. Zhu, I. Calizo, R. Abbaschian, S. Ghosh
Keywords: density, electronics, graphene, Growth Process, High-Pressure High-Temperature, High-Pressure High-Temperature (HPHT) Growth Process, HPHT, Micro-Raman Spectroscopy, Nanoelectric Circuits, Scanning Electron Microscopy, Scanning Electron Microscopy (SEM), SEM, Semiconductors, Thermal Conductivity, TPS Method
Abstract: In this article, the authors present a novel method for the synthesis of graphene layers that can be used in advanced electronic devices, among other applications. The preparation method involves the use of a high-pressure high-temperature process where the pressure and temperature are closely monitored in order to preferentially prepare graphene layers. The quality of the material synthesized is much better than previously reported, and the size of the layers prepared are also larger than previously reported. The prepared material is then characterized via micro-Raman spectroscopy, SEM to evaluate the chemical, structural and thermal properties of the graphene.
Reference: Micro and Nano Letters, 3, 1 (2008) 29-34
DOI: 10.1049/mnl:20070074