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Author(s): , , ,

Keywords: , , , , , , , , , , , , , , , , , , , , ,

Abstract: Vertically-aligned silicon nanowires (SiNWs) are investigated for their use as thermoelectric materials. Using a silver-induced electroless-etching method, SiNWs of varying lengths are prepared, which are expected to have lower thermal conductivities as compared to bulk silicon. A Hot Disk thermal constants analyzer is used to perform the thermal analysis of the SiNWs, and thermal conductivity values are reduced by up to 43%. Theoretical models are then used to explain the quantitative results obtained by thermal analysis of the nanowires.

Reference: Optics Express, 18, 103 (2010) A467-A476

DOI: 10.1364/OE.18.00A467