This study aimed to develop a new technique for thermal management in high powered gallium nitride (GaN) electronic and optoelectronic devices. The researchers integrated GaN with diamond through the process of depositing high-quality nanocrystalline diamond films directly onto the GaN material at temperatures between 450-500°...
As electronic devices become smaller, power densities increase and so do hotspot temperatures, leading to a need for materials that can exchange heat better. The materials that facilitate this heat exchange are called thermal interface materials (TIMs). Graphene has been shown to demonstrate superior thermal ...
