This study aimed to develop a new technique for thermal management in high powered gallium nitride (GaN) electronic and optoelectronic devices. The researchers integrated GaN with diamond through the process of depositing high-quality nanocrystalline diamond films directly onto the GaN material at temperatures between 450-500°C. Highly controlled growth conditions for the diamond ensured that it was of good quality. Thermal conductivity measurements using the laser flash method were performed ...
As electronic devices become smaller, power densities increase and so do hotspot temperatures, leading to a need for materials that can exchange heat better. The materials that facilitate this heat exchange are called thermal interface materials (TIMs). Graphene has been shown to demonstrate superior thermal conductivity and a particular form called few-layer graphene (FLG) was used in this project. A novel TIM was created by the mixing of a silver ...
