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This study aimed to develop a new technique for thermal management in high powered gallium nitride (GaN) electronic and optoelectronic devices. The researchers integrated GaN with diamond through the process of depositing high-quality nanocrystalline diamond films directly onto the GaN material at temperatures between 450-500°C. Highly controlled growth conditions for the diamond ensured that it was of good quality. Thermal conductivity measurements using the laser flash method were performed ...
